Defect Inspection Techniques in SiC

Po Chih Chen, Wen Chien Miao, Tanveer Ahmed, Yi Yu Pan, Chun Liang Lin, Shih Chen Chen, Hao Chung Kuo, Bing Yue Tsui, Der Hsien Lien*

*此作品的通信作者

研究成果: Review article同行評審

摘要

With the increasing demand of silicon carbide (SiC) power devices that outperform the silicon-based devices, high cost and low yield of SiC manufacturing process are the most urgent issues yet to be solved. It has been shown that the performance of SiC devices is largely influenced by the presence of so-called killer defects, formed during the process of crystal growth. In parallel to the improvement of the growth techniques for reducing defect density, a post-growth inspection technique capable of identifying and locating defects has become a crucial necessity of the manufacturing process. In this review article, we provide an outlook on SiC defect inspection technologies and the impact of defects on SiC devices. This review also discusses the potential solutions to improve the existing inspection technologies and approaches to reduce the defect density, which are beneficial to mass production of high-quality SiC devices.

原文English
文章編號30
期刊Nanoscale Research Letters
17
發行號1
DOIs
出版狀態Published - 2022

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