Deep sub-micron strained Si0.85Ge0.15 channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectric

Ching Wei Chen*, Chao-Hsin Chien, Yi Cheng Chen, Shih Lu Hsu, Chun Yen Chang

*此作品的通信作者

研究成果: Article › 同行評審

1 引文 斯高帕斯（Scopus）

指紋

深入研究「Deep sub-micron strained Si0.85Ge0.15 channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectric」主題。共同形成了獨特的指紋。

Keyphrases

Material Science

Engineering