Deep levels, electrical and optical characteristics in SnTe-Doped GaSb Schottky diodes

Jenn-Fang Chen*, N. C. Chen, H. S. Liu

*此作品的通信作者

研究成果: Article同行評審

摘要

The GaSb layers investigated were grown directly on GaAs substrates by molecular beam epitaxy (MBE) using SnTe source as the n-type dopant. By using admittance spectroscopy, a dominant deep level with the activation energy of 0.23-0.26 eV was observed and its concentration was affected by the Sb4/Ga flux ratio in the MBE growth. A lowest deep-level concentration together with a highest mobility was obtained for GaSb grown at 55°C under a Sb4/Ga beam equivalent pressure (BEP) ratio around 7, which should correspond to the lowest ratio to maintain a Sb-stabilized surface reconstruction. In the Hall measurement, an analysis of the temperature-dependent mobility shows that the ionized impurity concentration increases proportionally with the sample's donor concentration, suggesting that the ionized impurity was introduced by an SnTe source. In addition, optical properties of an undoped p-, a lightly and heavily SnTe-doped GaSb layers were studied by comparing their photoluminescence spectra at 4.5K.

原文English
頁(從 - 到)1790-1796
頁數7
期刊Journal of Electronic Materials
25
發行號11
DOIs
出版狀態Published - 11月 1996

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