摘要
A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.
| 原文 | English |
|---|---|
| 頁（從 - 到） | L1158-L1160 |
| 頁數 | 3 |
| 期刊 | Japanese Journal of Applied Physics, Part 2: Letters |
| 卷 | 35 |
| 發行號 | 9 B |
| DOIs | |
| 出版狀態 | Published - 9月 1996 |