Deep etch of GaP using high-density plasma for light-emitting diode applications

D. S. Wuu; C. R. Chung; Y. H. Liu; Ray-Hua Horng; S. H. Huang

doi:10.1116/1.1475983

Deep etch of GaP using high-density plasma for light-emitting diode applications

D. S. Wuu^*, C. R. Chung, Y. H. Liu, Ray-Hua Horng, S. H. Huang

^*此作品的通信作者

電子研究所

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7 引文斯高帕斯（Scopus）

摘要

Deep etching of GaP was performed using high density plasma in an inductively coupled plasma reactor. The effects of process parameters like gas combination and inductive power were investigated. Response surface method was used to analyze the dependence of etch rates and selectivity on rf chunk power and chamber pressure. The mechanism of leakage current density and brightness with various rf powers on AlGaInP light emitting diodes with a thick GaP window layer was studied. The increase in etch rate with increasing pressure chamber was observed.

原文	English
頁（從 - 到）	902-908
頁數	7
期刊	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
卷	20
發行號	3
DOIs	https://doi.org/10.1116/1.1475983
出版狀態	Published - 1 5月 2002
事件	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, 美國持續時間: 1 10月 2001 → 3 10月 2001

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abstract = "Deep etching of GaP was performed using high density plasma in an inductively coupled plasma reactor. The effects of process parameters like gas combination and inductive power were investigated. Response surface method was used to analyze the dependence of etch rates and selectivity on rf chunk power and chamber pressure. The mechanism of leakage current density and brightness with various rf powers on AlGaInP light emitting diodes with a thick GaP window layer was studied. The increase in etch rate with increasing pressure chamber was observed.",

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T1 - Deep etch of GaP using high-density plasma for light-emitting diode applications

AU - Wuu, D. S.

AU - Chung, C. R.

AU - Liu, Y. H.

AU - Horng, Ray-Hua

AU - Huang, S. H.

PY - 2002/5/1

Y1 - 2002/5/1

N2 - Deep etching of GaP was performed using high density plasma in an inductively coupled plasma reactor. The effects of process parameters like gas combination and inductive power were investigated. Response surface method was used to analyze the dependence of etch rates and selectivity on rf chunk power and chamber pressure. The mechanism of leakage current density and brightness with various rf powers on AlGaInP light emitting diodes with a thick GaP window layer was studied. The increase in etch rate with increasing pressure chamber was observed.

AB - Deep etching of GaP was performed using high density plasma in an inductively coupled plasma reactor. The effects of process parameters like gas combination and inductive power were investigated. Response surface method was used to analyze the dependence of etch rates and selectivity on rf chunk power and chamber pressure. The mechanism of leakage current density and brightness with various rf powers on AlGaInP light emitting diodes with a thick GaP window layer was studied. The increase in etch rate with increasing pressure chamber was observed.

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U2 - 10.1116/1.1475983

DO - 10.1116/1.1475983

M3 - Conference article

AN - SCOPUS:0035998509

SN - 1071-1023

VL - 20

SP - 902

EP - 908

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 20th North American Conference on Molecular Beam Epitaxy

Y2 - 1 October 2001 through 3 October 2001

ER -

Deep etch of GaP using high-density plasma for light-emitting diode applications

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