Deactivation of the boron acceptor in silicon by hydrogen

Chih Tang Sah*, Jack Yuan Chen Sun, Joseph Jeng Tao Tzou

*此作品的通信作者

研究成果: Article同行評審

276 引文 斯高帕斯(Scopus)

摘要

Two new experiments are presented which suggest that the]] bulk-compensating donor" phenomenon observed in p-Si is probably a deactivation process of the boron acceptor by hydrogen with the formation of a B -H+ pair. The two experiments are (i) avalanche hole injection in Al-gate metal-oxide-silicon capacitor from boron-diffused n-Si substrate and (ii) 5-keV electron irradiation of Al/p-Si Schottky diodes. Atomic hydrogen may be released by the avalanche injected energetic electrons or holes or keV electrons from the Al-H, AlO-H, Si-H, and SiO-H sites in the Al gate and the SiO2 film as well as at the Al/SiO2 and SiO 2/Si interfaces, which may then migrate to the boron acceptor sites to form the B-H+ pair. Observed hydrogen bond breaking rate by holes is as much as two orders of magnitude larger than by electrons, which is consistent with the thermal hole capture and energetic electron impact bond-breaking models.

原文English
頁(從 - 到)204-206
頁數3
期刊Applied Physics Letters
43
發行號2
DOIs
出版狀態Published - 1983

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