DC/RF Performance and Reliability of 100-nm Gate Length AlGaN/GaN MIS-HEMTs with Different Thickness of in-situ SiN

Chin Ya Su, Meng Che Tsai, Tian Li Wu*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

GaN HEMTs are promising for RF applications because of their wide bandgap and high electron mobility. To achieve a rapid operation speed, scaling of gate length is necessary for RF devices. Furthermore, metal-insulator-semiconductor (MIS)-HEMTs are often used to achieve a low gate leakage current. In this work, AlGaN/GaN MIS-HEMTs with 100-nm LG and 15/30-nm in-situ SiN as gate dielectric were fabricated and analyzed. Typical DC and RF characteristics, and reliability evaluations including gate-lag/drain-lag measurement, were conducted. The device with thinner in-situ SiN exhibits better RF performance (fT/ fMax= 101/73 GHz; PAE =38%) but with a larger current drop after gate-lag/drain-lag measurements, which can be due to a higher electric field caused by the thinner dielectric.

原文English
主出版物標題2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350334166
DOIs
出版狀態Published - 2023
事件2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Hsinchu, Taiwan
持續時間: 17 4月 202320 4月 2023

出版系列

名字2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings

Conference

Conference2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023
國家/地區Taiwan
城市Hsinchu
期間17/04/2320/04/23

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