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DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETs
Wen Li Sung,
Yi-Ming Li
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此作品的通信作者
電信工程研究所
研究成果
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同行評審
25
引文 斯高帕斯(Scopus)
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深入研究「DC/AC/RF Characteristic Fluctuations Induced by Various Random Discrete Dopants of Gate-All-Around Silicon Nanowire n-MOSFETs」主題。共同形成了獨特的指紋。
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Keyphrases
NMOSFET
100%
Silicon Nanowires (SiNWs)
100%
RF Characteristics
100%
Gate-all-around
100%
AC-DC
100%
Characteristic Fluctuation
100%
Random Discrete Dopants
100%
Threshold Voltage
40%
MOSFET
20%
Electron Mobility
20%
Cut-off Frequency
20%
Injection Velocity
20%
Semiconductor Process
20%
Voltage Gain
20%
Drain Extension
20%
Device Simulation
20%
High-frequency Characteristics
20%
Channel Doping
20%
Saturation Velocity
20%
Transport Model
20%
Amplifier Circuit
20%
3 dB Frequency
20%
Fluctuation Voltage
20%
Pertinent Information
20%
High-frequency Amplifier
20%
Voltage Cut-off
20%
Engineering
Dopants
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Nanowire
100%
Cutoff Frequency
20%
Injection Velocity
20%
Frequency Characteristic
20%
Gain Frequency
20%
Amplifier Circuit
20%
Voltage Fluctuation
20%