Data retention behavior of a SONOS type two-bit storage flash memory cell

W. J. Tsai; N. K. Zous; C. J. Liu; C. C. Liu; C. H. Chen; Ta-Hui Wang; Sam Pan; Chih Yuan Lu; S. H. Gu

doi:10.1109/IEDM.2001.979614

Data retention behavior of a SONOS type two-bit storage flash memory cell

W. J. Tsai^*, N. K. Zous, C. J. Liu, C. C. Liu, C. H. Chen, Ta-Hui Wang, Sam Pan, Chih Yuan Lu, S. H. Gu

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研究成果 › 同行評審

88 引文斯高帕斯（Scopus）

摘要

Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are investigated. In erase (low-V_t) state, a threshold voltage drift with storage time is observed after P/E cycling stress. Positive trapped charge creation in the bottom oxide is found to be responsible for the drift. In program (high-V_t) state, data retention loss is attributed mostly to nitride charge escape by Frenkel-Poole emission and oxide trap assisted tunneling. A square-root dependence of the nitride charge loss on electric field is obtained. A V_g-acceleration method for retention lifetime measurement is proposed.

原文	English
頁（從 - 到）	719-722
頁數	4
期刊	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2001.979614
出版狀態	Published - 1 12月 2001
事件	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, 美國持續時間: 2 12月 2001 → 5 12月 2001

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10.1109/IEDM.2001.979614

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title = "Data retention behavior of a SONOS type two-bit storage flash memory cell",

abstract = "Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are investigated. In erase (low-Vt) state, a threshold voltage drift with storage time is observed after P/E cycling stress. Positive trapped charge creation in the bottom oxide is found to be responsible for the drift. In program (high-Vt) state, data retention loss is attributed mostly to nitride charge escape by Frenkel-Poole emission and oxide trap assisted tunneling. A square-root dependence of the nitride charge loss on electric field is obtained. A Vg-acceleration method for retention lifetime measurement is proposed.",

author = "Tsai, {W. J.} and Zous, {N. K.} and Liu, {C. J.} and Liu, {C. C.} and Chen, {C. H.} and Ta-Hui Wang and Sam Pan and Lu, {Chih Yuan} and Gu, {S. H.}",

year = "2001",

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day = "1",

doi = "10.1109/IEDM.2001.979614",

language = "English",

pages = "719--722",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

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TY - JOUR

T1 - Data retention behavior of a SONOS type two-bit storage flash memory cell

AU - Tsai, W. J.

AU - Zous, N. K.

AU - Liu, C. J.

AU - Liu, C. C.

AU - Chen, C. H.

AU - Wang, Ta-Hui

AU - Pan, Sam

AU - Lu, Chih Yuan

AU - Gu, S. H.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are investigated. In erase (low-Vt) state, a threshold voltage drift with storage time is observed after P/E cycling stress. Positive trapped charge creation in the bottom oxide is found to be responsible for the drift. In program (high-Vt) state, data retention loss is attributed mostly to nitride charge escape by Frenkel-Poole emission and oxide trap assisted tunneling. A square-root dependence of the nitride charge loss on electric field is obtained. A Vg-acceleration method for retention lifetime measurement is proposed.

AB - Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are investigated. In erase (low-Vt) state, a threshold voltage drift with storage time is observed after P/E cycling stress. Positive trapped charge creation in the bottom oxide is found to be responsible for the drift. In program (high-Vt) state, data retention loss is attributed mostly to nitride charge escape by Frenkel-Poole emission and oxide trap assisted tunneling. A square-root dependence of the nitride charge loss on electric field is obtained. A Vg-acceleration method for retention lifetime measurement is proposed.

UR - http://www.scopus.com/inward/record.url?scp=0035714879&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2001.979614

DO - 10.1109/IEDM.2001.979614

M3 - Conference article

AN - SCOPUS:0035714879

SN - 0163-1918

SP - 719

EP - 722

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

Data retention behavior of a SONOS type two-bit storage flash memory cell

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