In this work the dielectric properties of plasma enhanced chemical vapor deposited (PECVD) amorphous SiOC (α-SiOC) films with various concentrations of oxygen are investigated for the barrier dielectric application. Experimental results show after fluorine (F) ion implanted into α-SiOC film, the leakage current in carbide film is increased due to the generation of trap centers. Afterwards, the traps can be effectively repaired after thermal annealing, leading to the decrease of leakage current further. From the extraction of the current-voltage (J-E) characteristics, the conducting mechanism of the leakage current obeys the Poole-Frenkel type behavior for intrinsic, F-implanted and thermally annealed samples. Also, the barrier height of the F-implanted and thermally annealed samples are extracted and exhibits a higher value than that of the intrinsic sample.
|頁（從 - 到）||301-306|
|期刊||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|出版狀態||Published - 1 8月 2005|
|事件||Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - |
持續時間: 25 10月 2004 → 27 10月 2004