Damage effect of fluorine implantation on PECVD α-SiOC barrier dielectric

F. M. Yang; T. C. Chang; Po-Tsun Liu; C. W. Chen; Ya-Hsiang Tai; J. C. Lou

doi:10.1016/j.nimb.2005.05.013

Damage effect of fluorine implantation on PECVD α-SiOC barrier dielectric

F. M. Yang, T. C. Chang^*, Po-Tsun Liu, C. W. Chen, Ya-Hsiang Tai, J. C. Lou

^*此作品的通信作者

光電工程學系

研究成果: Conference article › 同行評審

摘要

In this work the dielectric properties of plasma enhanced chemical vapor deposited (PECVD) amorphous SiOC (α-SiOC) films with various concentrations of oxygen are investigated for the barrier dielectric application. Experimental results show after fluorine (F) ion implanted into α-SiOC film, the leakage current in carbide film is increased due to the generation of trap centers. Afterwards, the traps can be effectively repaired after thermal annealing, leading to the decrease of leakage current further. From the extraction of the current-voltage (J-E) characteristics, the conducting mechanism of the leakage current obeys the Poole-Frenkel type behavior for intrinsic, F-implanted and thermally annealed samples. Also, the barrier height of the F-implanted and thermally annealed samples are extracted and exhibits a higher value than that of the intrinsic sample.

原文	English
頁（從 - 到）	301-306
頁數	6
期刊	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
卷	237
發行號	1-2
DOIs	https://doi.org/10.1016/j.nimb.2005.05.013
出版狀態	Published - 1 8月 2005
事件	Ion Implantation Technology Proceedings of the 15th International Conference on Ion Implantation Technology ITT 2004 - 持續時間: 25 10月 2004 → 27 10月 2004

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10.1016/j.nimb.2005.05.013

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@article{aa06305a002348aeb1bc110203aad04f,

title = "Damage effect of fluorine implantation on PECVD α-SiOC barrier dielectric",

abstract = "In this work the dielectric properties of plasma enhanced chemical vapor deposited (PECVD) amorphous SiOC (α-SiOC) films with various concentrations of oxygen are investigated for the barrier dielectric application. Experimental results show after fluorine (F) ion implanted into α-SiOC film, the leakage current in carbide film is increased due to the generation of trap centers. Afterwards, the traps can be effectively repaired after thermal annealing, leading to the decrease of leakage current further. From the extraction of the current-voltage (J-E) characteristics, the conducting mechanism of the leakage current obeys the Poole-Frenkel type behavior for intrinsic, F-implanted and thermally annealed samples. Also, the barrier height of the F-implanted and thermally annealed samples are extracted and exhibits a higher value than that of the intrinsic sample.",

keywords = "Barrier dielectric, Implantation, PECVD, Poole-Frenkel, SiOC",

author = "Yang, {F. M.} and Chang, {T. C.} and Po-Tsun Liu and Chen, {C. W.} and Ya-Hsiang Tai and Lou, {J. C.}",

year = "2005",

month = aug,

day = "1",

doi = "10.1016/j.nimb.2005.05.013",

language = "English",

volume = "237",

pages = "301--306",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "1-2",

note = "null ; Conference date: 25-10-2004 Through 27-10-2004",

}

TY - JOUR

T1 - Damage effect of fluorine implantation on PECVD α-SiOC barrier dielectric

AU - Yang, F. M.

AU - Chang, T. C.

AU - Liu, Po-Tsun

AU - Chen, C. W.

AU - Tai, Ya-Hsiang

AU - Lou, J. C.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - In this work the dielectric properties of plasma enhanced chemical vapor deposited (PECVD) amorphous SiOC (α-SiOC) films with various concentrations of oxygen are investigated for the barrier dielectric application. Experimental results show after fluorine (F) ion implanted into α-SiOC film, the leakage current in carbide film is increased due to the generation of trap centers. Afterwards, the traps can be effectively repaired after thermal annealing, leading to the decrease of leakage current further. From the extraction of the current-voltage (J-E) characteristics, the conducting mechanism of the leakage current obeys the Poole-Frenkel type behavior for intrinsic, F-implanted and thermally annealed samples. Also, the barrier height of the F-implanted and thermally annealed samples are extracted and exhibits a higher value than that of the intrinsic sample.

AB - In this work the dielectric properties of plasma enhanced chemical vapor deposited (PECVD) amorphous SiOC (α-SiOC) films with various concentrations of oxygen are investigated for the barrier dielectric application. Experimental results show after fluorine (F) ion implanted into α-SiOC film, the leakage current in carbide film is increased due to the generation of trap centers. Afterwards, the traps can be effectively repaired after thermal annealing, leading to the decrease of leakage current further. From the extraction of the current-voltage (J-E) characteristics, the conducting mechanism of the leakage current obeys the Poole-Frenkel type behavior for intrinsic, F-implanted and thermally annealed samples. Also, the barrier height of the F-implanted and thermally annealed samples are extracted and exhibits a higher value than that of the intrinsic sample.

KW - Barrier dielectric

KW - Implantation

KW - PECVD

KW - Poole-Frenkel

KW - SiOC

UR - http://www.scopus.com/inward/record.url?scp=23444459230&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.05.013

DO - 10.1016/j.nimb.2005.05.013

M3 - Conference article

AN - SCOPUS:23444459230

SN - 0168-583X

VL - 237

SP - 301

EP - 306

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2

Y2 - 25 October 2004 through 27 October 2004

ER -

Damage effect of fluorine implantation on PECVD α-SiOC barrier dielectric

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