Damage caused by rf oxygen plasma asher

Seiji Samukawa*

*此作品的通信作者

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

A new method for investigating the influence of stored charge and mobile ion contamination during photoresist ashing is proposed and is discussed with respect to the effect of the downstream on the photoresist ashing process. The results of leakage current of CMOS inverter circuits and the threshold voltage shifts of field MOS transistors with aluminum gates indicate that RF oxygen downstream with baffle is very effective in preventing the influence of stored charge and mobile ion contamination.

原文English
頁(從 - 到)L1467-L1469
期刊Japanese journal of applied physics
28
發行號8 A
DOIs
出版狀態Published - 1 8月 1989

指紋

深入研究「Damage caused by rf oxygen plasma asher」主題。共同形成了獨特的指紋。

引用此