Damage caused by rf oxygen plasma asher

Seiji Samukawa

doi:10.1143/JJAP.28.L1467

Damage caused by rf oxygen plasma asher

Seiji Samukawa^*

^*此作品的通信作者

電信工程研究所

研究成果: Article › 同行評審

3 引文斯高帕斯（Scopus）

摘要

A new method for investigating the influence of stored charge and mobile ion contamination during photoresist ashing is proposed and is discussed with respect to the effect of the downstream on the photoresist ashing process. The results of leakage current of CMOS inverter circuits and the threshold voltage shifts of field MOS transistors with aluminum gates indicate that RF oxygen downstream with baffle is very effective in preventing the influence of stored charge and mobile ion contamination.

原文	English
頁（從 - 到）	L1467-L1469
期刊	Japanese journal of applied physics
卷	28
發行號	8 A
DOIs	https://doi.org/10.1143/JJAP.28.L1467
出版狀態	Published - 1 8月 1989

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10.1143/JJAP.28.L1467

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KW - Damage

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KW - Mobile ion contamination

KW - Stored charge

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Damage caused by rf oxygen plasma asher

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