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Curvature of substrates is measured by means of a self-mixing scheme
Tiziana Tambosso
*
,
Ray-Hua Horng
, Silvano Donati
*
此作品的通信作者
電子研究所
研究成果
:
Article
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同行評審
6
引文 斯高帕斯(Scopus)
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Keyphrases
Metal-organic Chemical Vapor Deposition (MOCVD)
100%
Wafer Surface
100%
Radius of Curvature
100%
Self-mixing
100%
Mixing Schemes
100%
In Situ Measurements
50%
Epitaxial Layers
50%
Diode Laser
50%
Non-contact
50%
Inclination Angle
50%
Angular Resolution
50%
Deposition Chamber
50%
Source Separation
50%
Triangulation
50%
Position Sensitive Detector
50%
Observation Window
50%
Camber
50%
Deposition Window
50%
Interferometric Detectors
50%
Back Reflection
50%
Wafer Rotation
50%
Beam Deflection Method
50%
Laser Beam Deflection
50%
Engineering
Metal Organic Chemical Vapor Deposition
100%
Data Show
50%
Inclination Angle
50%
Angular Resolution
50%
Sensitive Detector
50%
Observation Window
50%
Situ Measurement
50%
Deflection Method
50%
Beam Deflection
50%
Epitaxial Film
50%
Laser Beams
50%