A description is given of the results of a theoretical study of the electrical and photovoltaic properties of metal-polycrystalline silicon contacts. An analysis of the dark behavior of these structures reveals that the current may be dominated either by majority carrier or by minority carrier transport, depending upon the conditions of Schottky barrier height and parameters which characterize the grain boundaries. Experimental verification of this theory is provided by the present results for Al-cast polysilicon contacts and by previously reported characteristics for thin films. The implications for solar cell parameters (open-circuit voltage, fill-factor, and conversion efficiency) are also discussed.
|頁（從 - 到）||404-409|
|期刊||Conference Record of the IEEE Photovoltaic Specialists Conference|
|出版狀態||Published - 1 1月 1980|
|事件||Conf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA|
持續時間: 7 1月 1980 → 10 1月 1980