CURRENT TRANSPORT MECHANISMS OF METAL-POLYCRYSTALLINE SILICON SCHOTTKY BARRIER SOLAR CELLS.

Wei Hwang*, E. S. Yang, H. C. Card, C. M. Wu

*此作品的通信作者

研究成果: Conference article同行評審

5 引文 斯高帕斯(Scopus)

摘要

A description is given of the results of a theoretical study of the electrical and photovoltaic properties of metal-polycrystalline silicon contacts. An analysis of the dark behavior of these structures reveals that the current may be dominated either by majority carrier or by minority carrier transport, depending upon the conditions of Schottky barrier height and parameters which characterize the grain boundaries. Experimental verification of this theory is provided by the present results for Al-cast polysilicon contacts and by previously reported characteristics for thin films. The implications for solar cell parameters (open-circuit voltage, fill-factor, and conversion efficiency) are also discussed.

原文English
頁(從 - 到)404-409
頁數6
期刊Conference Record of the IEEE Photovoltaic Specialists Conference
出版狀態Published - 1 1月 1980
事件Conf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA
持續時間: 7 1月 198010 1月 1980

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