Current spreading of III-nitride light-emitting diodes using plasma treatment

Hsin Ying Lee, Ke Hao Pan, Chih Chien Lin, Yun Chorng Chang, Fu Jen Kao, Ching Ting Lee*

*此作品的通信作者

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

In this study, (C F4 + O2) plasma is used to selectively treat the p -type GaN region underneath the bonding pad of the anode electrode of III-nitride light-emitting diodes (LEDs). A more uniform light emission distribution is observed in the far-field pattern of the plasma-treated devices and a 16% enhancement of the output intensity under the same biasing current is obtained. The maximum current that can be applied is also higher for the plasma-treated device. Not only does the plasma treatment of the p-GaN layer lead to a highly insulating region but also it does not degrade the device performance. Results from this study indicate that the plasma treatment is able to improve the current spreading of the III-nitride LEDs.

原文English
頁(從 - 到)1280-1283
頁數4
期刊Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
25
發行號4
DOIs
出版狀態Published - 2007

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