Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template

Cheng-Huang Kuo; Li Chuan Chang; Hsiu Mei Chou

doi:10.1109/LPT.2012.2185043

Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template

Cheng-Huang Kuo^*
, Li Chuan Chang
, Hsiu Mei Chou

^*此作品的通信作者

光電學院

研究成果: Article › 同行評審

7 引文斯高帕斯（Scopus）

摘要

In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.

原文	English
文章編號	6134636
頁（從 - 到）	608-610
頁數	3
期刊	IEEE Photonics Technology Letters
卷	24
發行號	7
DOIs	https://doi.org/10.1109/LPT.2012.2185043
出版狀態	Published - 30 3月 2012

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10.1109/LPT.2012.2185043

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title = "Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template",

abstract = "In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0\%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.",

keywords = "Current spreading, InGaN/GaN, light-emitting diode (LED), nano",

author = "Cheng-Huang Kuo and Chang, \{Li Chuan\} and Chou, \{Hsiu Mei\}",

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AU - Kuo, Cheng-Huang

AU - Chang, Li Chuan

AU - Chou, Hsiu Mei

PY - 2012/3/30

Y1 - 2012/3/30

N2 - In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.

AB - In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.

KW - Current spreading

KW - InGaN/GaN

KW - light-emitting diode (LED)

KW - nano

UR - https://www.scopus.com/pages/publications/84858953617

U2 - 10.1109/LPT.2012.2185043

DO - 10.1109/LPT.2012.2185043

M3 - Article

AN - SCOPUS:84858953617

SN - 1041-1135

VL - 24

SP - 608

EP - 610

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 7

M1 - 6134636

ER -

Current spreading improvement in GaN-based light-emitting diode grown on nano-rod GaN template

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