摘要
In this letter, we demonstrate GaN-based light-emitting diodes (LEDs) with high-quality heavily-Si-doped n-GaN prepared on a nano-rod GaN (NR-GaN) template. With 20-mA current injection, it was found that light output power (LOP) can be enhanced 29.0%, as compared to the conventional LED. Enhancement of the LOP can be attributed to the improvement of the current spreading and the increase of light extraction efficiency by using the heavily-Si-doped n-GaN prepared on the NR-GaN template.
| 原文 | English |
|---|---|
| 文章編號 | 6134636 |
| 頁（從 - 到） | 608-610 |
| 頁數 | 3 |
| 期刊 | IEEE Photonics Technology Letters |
| 卷 | 24 |
| 發行號 | 7 |
| DOIs | |
| 出版狀態 | Published - 30 3月 2012 |