Current Rectification and Photo-Responsive Current Achieved through Interfacial Facet Control of Cu2O-Si Wafer Heterojunctions

An Ting Lee, Chih-Shan Tan, Michael H. Huang*

*此作品的通信作者

研究成果: Article同行評審

23 引文 斯高帕斯(Scopus)

摘要

Conductive atomic force microscopy (C-AFM) was employed to perform conductivity measurements on a facet-specific Cu2O cube, octahedron, and rhombic dodecahedron and intrinsic Si {100}, {111}, and {110} wafers. Similar I-V curves to those recorded previously using a nanomanipulator were obtained with the exception of high conductivity for the Si {110} wafer. Next, I-V curves of different Cu2O-Si heterostructures were evaluated. Among the nine possible arrangements, Cu2O octahedron/Si {100} wafer and Cu2O octahedron/Si {110} wafer combinations show good current rectification behaviors. Under white light illumination, Cu2O cube/Si {110} wafer and Cu2O rhombic dodecahedron/Si {111} wafer combinations exhibit the largest degrees of photocurrent, so such interfacial plane-controlled semiconductor heterojunctions with light sensitivity can be applied to make photodetectors. Adjusted band diagrams are presented highlighting different interfacial band bending situations to facilitate or inhibit current flow for different Cu2O-Si junctions. More importantly, the observation of clear current-rectifying effects produced at the semiconductor heterojunctions with properly selected contacting faces or planes implies that novel field-effect transistors (FETs) can be fabricated using this design strategy, which should integrate well with current chip manufacturing processes.

原文American English
頁(從 - 到)1929-1937
頁數9
期刊ACS Central Science
7
發行號11
DOIs
出版狀態Published - 24 11月 2021

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