Current conduction behavior on GaN V-defect was studied comprehensively using conductive atomic force microscopy. Experimental results indicate that the forward current in the V-defect region is at least three-order higher than that at surrounding area. On the other hand, a snowflake-like leakage current pattern was observed in the V-defect owing to the ease of current breakdown at the crest lines and perimeters. Further static current-voltage measurement suggests that the current flow is governed by Schottky emission and Fowler-Nordheim tunneling for V-defect region and surrounding area, respectively.
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 11 8月 2006|