Current-induced Néel order switching facilitated by magnetic phase transition

Hao Wu*, Hantao Zhang, Baomin Wang, Felix Groß, Chao Yao Yang, Gengfei Li, Chenyang Guo, Haoran He, Kin Wong, Di Wu, Xiufeng Han, Chih Huang Lai, Joachim Gräfe, Ran Cheng, Kang L. Wang

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

Terahertz (THz) spin dynamics and vanishing stray field make antiferromagnetic (AFM) materials the most promising candidate for the next-generation magnetic memory technology with revolutionary storage density and writing speed. However, owing to the extremely large exchange energy barriers, energy-efficient manipulation has been a fundamental challenge in AFM systems. Here, we report an electrical writing of antiferromagnetic orders through a record-low current density on the order of 106 A cm−2 facilitated by the unique AFM-ferromagnetic (FM) phase transition in FeRh. By introducing a transient FM state via current-induced Joule heating, the spin-orbit torque can switch the AFM order parameter by 90° with a reduced writing current density similar to ordinary FM materials. This mechanism is further verified by measuring the temperature and magnetic bias field dependences, where the X-ray magnetic linear dichroism (XMLD) results confirm the AFM switching besides the electrical transport measurement. Our findings demonstrate the exciting possibility of writing operations in AFM-based devices with a lower current density, opening a new pathway towards pure AFM memory applications.

原文English
文章編號1629
期刊Nature Communications
13
發行號1
DOIs
出版狀態Published - 12月 2022

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