Current-field characteristics of oxides grown from polycrystalline silicon

Chen-Ming Hu*, Ying Shum, Tom Klein, Elroy Lucero

*此作品的通信作者

研究成果: Article同行評審

14 引文 斯高帕斯(Scopus)

摘要

A new technique determined the J-E characteristics of silicon dioxide grown from polycrystalline silicon with greatly improved sensitivity. More importantly, the current density was measured over a 10-decade range without the problem of current drift or uncertainty about the field at the cathode surface due to charge trapping in the oxide. The apparent barrier height decreased with increasing electric field as if the barrier lowering was due to field enhancement at surface asperities of about 500 Å in size. The technique is applicable to other dielectrics where charge trapping presents difficulties to J-E measurements.

原文English
頁(從 - 到)189-191
頁數3
期刊Applied Physics Letters
35
發行號2
DOIs
出版狀態Published - 1 12月 1979

指紋

深入研究「Current-field characteristics of oxides grown from polycrystalline silicon」主題。共同形成了獨特的指紋。

引用此