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CsBr Immersion for Organic-Inorganic Hybrid Perovskite-Based Memristors: Controllable Grain, Poole-Frenkel Emission, and Electrical Properties
Yen Shuo Chen
, Ching Chang Lin
, Chih Wei Lin
, Shang Yu Tsai
,
Fu Hsiang Ko
*
*
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引文 斯高帕斯(Scopus)
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Keyphrases
Poole-Frenkel Emission
100%
Electrical Properties
100%
Resistive Random Access Memory (ReRAM)
100%
Emission Properties
100%
Organic-inorganic Hybrid Perovskite
100%
Memristor
100%
CsBr
100%
Grain Boundary
42%
MAPbI3
42%
On-state Current
28%
Defect Density
28%
Conductive Filament
28%
Ionic Solution
28%
Immersion Time
28%
Solution Immersion
28%
High Performance
14%
Low Density
14%
Photoluminescence Intensity
14%
Active Layer
14%
Average Grain Size
14%
Perovskite
14%
Methylammonium Lead Iodide
14%
Grain Size
14%
Device-independent
14%
Device Fabrication
14%
Perovskite Film
14%
Size Reduction
14%
Space Charge Limited Current
14%
Resistive Switching
14%
Humidity
14%
Memory-based
14%
Data Retention
14%
Indium Tin Oxide Substrate
14%
Density Variation
14%
Conduction Mechanism
14%
Ambient Air
14%
Treatment Duration
14%
Grain Boundary Regions
14%
Grain number
14%
Grain Size Reduction
14%
Perovskite Grain
14%
Current Mechanism
14%
Switching Path
14%
Organic-inorganic Hybrid Perovskite Film
14%
Treatment Switch
14%
Immersion Treatment
14%
High Signal
14%
Perovskite Devices
14%
Material Science
Electrical Property
100%
Grain Boundary
100%
Grain Size
75%
Film
50%
Density
25%
Indium Tin Oxide
25%
Photoluminescence
25%
Defect Density
25%
Device Fabrication
25%