TY - JOUR
T1 - Crystallinity-engineered heterojunction interfaces for Robust visual memory in optoelectronic artificial synapses
AU - Chen, Jo Lin
AU - Chiang, Tsung Che
AU - Liu, Po Tsun
N1 - Publisher Copyright:
© 2025
PY - 2026/1/15
Y1 - 2026/1/15
N2 - A biomimetic optoelectronic synaptic device based on WO3/InWZnO heterojunction transistor is proposed to emulate human visual signal processing. By tailoring the crystallinity of the WO3 layer through thermal annealing, the devices exhibit significantly enhanced optoelectronic performance, featuring a responsivity (R) of 18.8 A W–1, a signal-to-noise ratio (SNR) of 4.5 × 107, and a specific detectivity (D*) of 1.7 × 1012 Jones under 650 nm optical stimulation. The devices also demonstrate diverse synaptic plasticity behaviors, including paired-pulse facilitation (PPF) and post-tetanic potentiation (PTP), highlighting their capability to mimic complex neural functions. In addition, the retention characteristics are also significantly improved, further supporting persistent information retention in neuromorphic vision systems. The synaptic parameters extracted from the proposed devices were implemented in a multilayer perceptron (MLP) model to assess their system-level applicability. Devices incorporating crystalline WO3 demonstrated improved recognition performance, achieving validation accuracies of 95.1 % and 85.8 % under Gaussian and pepper and salt noise conditions, respectively. Furthermore, under a 2 × 2 optoelectronic synapse array configuration, the proposed devices exhibit superior nonvolatile characteristics, retaining 61 % of their initial current after 200 s. These characteristics underscore the potential of the proposed devices for high-performance, noise-resilient memory-based neuromorphic computing applications.
AB - A biomimetic optoelectronic synaptic device based on WO3/InWZnO heterojunction transistor is proposed to emulate human visual signal processing. By tailoring the crystallinity of the WO3 layer through thermal annealing, the devices exhibit significantly enhanced optoelectronic performance, featuring a responsivity (R) of 18.8 A W–1, a signal-to-noise ratio (SNR) of 4.5 × 107, and a specific detectivity (D*) of 1.7 × 1012 Jones under 650 nm optical stimulation. The devices also demonstrate diverse synaptic plasticity behaviors, including paired-pulse facilitation (PPF) and post-tetanic potentiation (PTP), highlighting their capability to mimic complex neural functions. In addition, the retention characteristics are also significantly improved, further supporting persistent information retention in neuromorphic vision systems. The synaptic parameters extracted from the proposed devices were implemented in a multilayer perceptron (MLP) model to assess their system-level applicability. Devices incorporating crystalline WO3 demonstrated improved recognition performance, achieving validation accuracies of 95.1 % and 85.8 % under Gaussian and pepper and salt noise conditions, respectively. Furthermore, under a 2 × 2 optoelectronic synapse array configuration, the proposed devices exhibit superior nonvolatile characteristics, retaining 61 % of their initial current after 200 s. These characteristics underscore the potential of the proposed devices for high-performance, noise-resilient memory-based neuromorphic computing applications.
KW - Artificial visual memory
KW - Heterojunction
KW - IWZO/WO
KW - Long-term memory
KW - Optoelectronic transistor
UR - https://www.scopus.com/pages/publications/105015148964
U2 - 10.1016/j.apsusc.2025.164520
DO - 10.1016/j.apsusc.2025.164520
M3 - Article
AN - SCOPUS:105015148964
SN - 0169-4332
VL - 715
JO - Applied Surface Science
JF - Applied Surface Science
M1 - 164520
ER -