Crystalline structure changes in GaN films grown at different temperatures

Heng Ching Lin*, Jehn Ou, Wei-Kuo Chen, Wen Hsiung Chen, Ming Chih Lee


研究成果: Article同行評審

24 引文 斯高帕斯(Scopus)


Thin GaN films were grown on (0001) sapphire at various temperatures between 520 and 1050 °C using metallorganic chemical vapor deposition (MOCVD). Optical properties and crystalline structures of the films were investigated by means of photoluminescence, Raman scattering, and X-ray diffraction. A noticeable structure transition occurred at around 750 °C with higher growth temperatures favoring the hexagonal structure and lower ones the cubic. Defect formation was also seen to be temperature dependent. The yellow luminescence which was clearly observed in our 700-850 °C films was attributable to the cubic and hexagonal structure mixing. The drastic reduction of yellow luminescence and the substantial enhancement of near band edge emission in the 950-1050 °C films indicated that this temperature range is optimum for growing high quality wurtzite films.

頁(從 - 到)L598-L600
期刊Japanese Journal of Applied Physics, Part 2: Letters
發行號5 B
出版狀態Published - 5月 1997


深入研究「Crystalline structure changes in GaN films grown at different temperatures」主題。共同形成了獨特的指紋。