Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

Shih Chun Ling; Chu Li Chao; Jun Rong Chen; Po Chun Liu; Tsung Shine Ko; Tien-Chang Lu; Hao-Chung Kuo; Shing Chung Wang; Shun-Jen Cheng; Jenq Dar Tsay

doi:10.1016/j.jcrysgro.2009.10.047

Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

Shih Chun Ling^*, Chu Li Chao, Jun Rong Chen, Po Chun Liu, Tsung Shine Ko, Tien-Chang Lu, Hao-Chung Kuo, Shing Chung Wang, Shun-Jen Cheng, Jenq Dar Tsay

^*此作品的通信作者

研究成果: Article › 同行評審

23 引文斯高帕斯（Scopus）

摘要

The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×10⁹ cm^-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.

原文	English
頁（從 - 到）	1316-1320
頁數	5
期刊	Journal of Crystal Growth
卷	312
發行號	8
DOIs	https://doi.org/10.1016/j.jcrysgro.2009.10.047
出版狀態	Published - 1 4月 2010

存取文件

10.1016/j.jcrysgro.2009.10.047

其它文件與鏈接

Link to publication in Scopus

引用此

@article{9a16f89557414cbda101b03cfd874183,

title = "Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods",

abstract = "The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×109 cm-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.",

keywords = "A1. Characterization, A3. Metalorganic chemical vapor deposition, B1. Nitrides, B2. Semiconducting gallium compounds",

author = "Ling, {Shih Chun} and Chao, {Chu Li} and Chen, {Jun Rong} and Liu, {Po Chun} and Ko, {Tsung Shine} and Tien-Chang Lu and Hao-Chung Kuo and Wang, {Shing Chung} and Shun-Jen Cheng and Tsay, {Jenq Dar}",

year = "2010",

month = apr,

day = "1",

doi = "10.1016/j.jcrysgro.2009.10.047",

language = "English",

volume = "312",

pages = "1316--1320",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "8",

}

TY - JOUR

T1 - Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

AU - Ling, Shih Chun

AU - Chao, Chu Li

AU - Chen, Jun Rong

AU - Liu, Po Chun

AU - Ko, Tsung Shine

AU - Lu, Tien-Chang

AU - Kuo, Hao-Chung

AU - Wang, Shing Chung

AU - Cheng, Shun-Jen

AU - Tsay, Jenq Dar

PY - 2010/4/1

Y1 - 2010/4/1

N2 - The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×109 cm-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.

AB - The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2 μm thickness. The a-plane GaN films grown on nano-rod template showed superior surface quality and less surface pits. The on-axis and off-axis FWHMs of X-ray rocking curves decreased with the increase in the etching depth of the nano-rod template. TEM analysis revealed that the dislocation density was reduced to around 1.2×109 cm-2 by the nano-rod epitaxial lateral overgrowth. In addition, the photoluminescence intensity of the a-plane GaN was enhanced significantly. These results demonstrated the opportunity of achieving a-plane GaN films with high crystal quality via nano-rod epitaxial lateral overgrowth.

KW - A1. Characterization

KW - A3. Metalorganic chemical vapor deposition

KW - B1. Nitrides

KW - B2. Semiconducting gallium compounds

UR - http://www.scopus.com/inward/record.url?scp=77949838397&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2009.10.047

DO - 10.1016/j.jcrysgro.2009.10.047

M3 - Article

AN - SCOPUS:77949838397

SN - 0022-0248

VL - 312

SP - 1316

EP - 1320

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 8

ER -

Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

摘要

存取文件

其它文件與鏈接

指紋

引用此