Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate

Chien Chih Chen; Chun Yan Yap; Wen Yang Hsu; Cheng Ta Kuo; Tzong Liang Tsai; Jui Yi Chu; Yew-Chuhg Wu

doi:10.1149/2.0021409ssl

Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate

Chien Chih Chen, Chun Yan Yap, Wen Yang Hsu, Cheng Ta Kuo, Tzong Liang Tsai, Jui Yi Chu, Yew-Chuhg Wu

材料科學與工程學系

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.

原文	English
期刊	ECS Solid State Letters
卷	3
發行號	9
DOIs	https://doi.org/10.1149/2.0021409ssl
出版狀態	Published - 1 1月 2014

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abstract = "The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.",

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AU - Chen, Chien Chih

AU - Yap, Chun Yan

AU - Hsu, Wen Yang

AU - Kuo, Cheng Ta

AU - Tsai, Tzong Liang

AU - Chu, Jui Yi

AU - Wu, Yew-Chuhg

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.

AB - The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.

UR - https://www.scopus.com/pages/publications/84906671264

U2 - 10.1149/2.0021409ssl

DO - 10.1149/2.0021409ssl

M3 - Article

AN - SCOPUS:84906671264

SN - 2162-8742

VL - 3

JO - ECS Solid State Letters

JF - ECS Solid State Letters

IS - 9

ER -

Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate

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