Crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate

Chien Chih Chen, Chun Yan Yap, Wen Yang Hsu, Cheng Ta Kuo, Tzong Liang Tsai, Jui Yi Chu, Yew-Chuhg Wu

研究成果: Article同行評審

4 引文 斯高帕斯(Scopus)

摘要

The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron-sized patterned sapphire substrate (MPSS) and conventional sapphire substrate. However, the light output power of GaN-based LEDs grown on NPSS was smaller than that on MPSS because the light extraction efficiency (LEE) of MPSS was much larger than that of NPSS.

原文English
期刊ECS Solid State Letters
3
發行號9
DOIs
出版狀態Published - 1 1月 2014

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