摘要
The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 μm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.
原文 | English |
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頁(從 - 到) | 1993-1999 |
頁數 | 7 |
期刊 | Materials |
卷 | 8 |
發行號 | 4 |
DOIs | |
出版狀態 | Published - 1 1月 2015 |