Crystal orientation and nitrogen effects on the carrier mobility of p-type metal oxide semiconductor field effect transistor with ultra thin gate dielectrics

Yao Jen Lee*, Pei Tsang Ho, Wen Luh Yang, Tien-Sheng Chao, Tiao Yuan Huang

*此作品的通信作者

研究成果: Article同行評審

摘要

In this study, nitrogen dosage effects on p-type metal oxide semiconductor field effect transistors (pMOSFETs) with ultra thin gate dielectric on Si(100) and Si(111) were investigated. pMOSFETs on Si(111) show a 64% improvement of transconductance over their on Si(100) counterparts. We found that the incorporation of nitrogen enhances the transconductance on Si(100), but degrades that on Si(111). In addition, compared to Si(100), pMOSFETs on Si(111) show a strong dependence with the aspect ratio effect due to the two-dimensional strain effect.

原文English
頁(從 - 到)1520-1524
頁數5
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號3 A
DOIs
出版狀態Published - 8 3月 2006

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