Cryogenic Endurance of Anti-ferroelectric and Ferroelectric Hf_1-xZr_XO_2 for Quantum Computing Applications

K. Y. Hsiang, J. Y. Lee, Z. F. Lou, F. S. Chang, Z. X. Li, C. W. Liu, T. H. Hou, P. Su, M. H. Lee*

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE) Hf_1-xZr_xO_2 capacitors is investigated for ∼ 1010 cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with 80% normalized switching 2P_r,sw for t_p= 1μs compared to 60% for the FE capacitor at 80 K.

原文English
主出版物標題2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781665456722
DOIs
出版狀態Published - 2023
事件61st IEEE International Reliability Physics Symposium, IRPS 2023 - Monterey, United States
持續時間: 26 3月 202330 3月 2023

出版系列

名字IEEE International Reliability Physics Symposium Proceedings
2023-March
ISSN(列印)1541-7026

Conference

Conference61st IEEE International Reliability Physics Symposium, IRPS 2023
國家/地區United States
城市Monterey
期間26/03/2330/03/23

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