TY - GEN
T1 - Cryogenic Characterization and Model Extraction of 5nm Technology Node FinFETs
AU - Parihar, Shivendra Singh
AU - Pahwa, Girish
AU - Huang, Jun Z.
AU - Wang, Weike
AU - Imura, Kimihiko
AU - Hu, Chenming
AU - Chauhan, Yogesh Singh
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - We present cryogenic characterization and compact model extraction of commercially fabricated 5nm technology FinFETs. A modified industry-standard BSIM-CMG model is used to accurately model band-tail, mobility, and velocity saturation effects up to 10K. At 10K, n-FinFET and p-FinFET show 87mV and 92mV threshold voltage shift and sub-threshold slopes of 12.7 and 16.7mV/decade (83% and 78% improvement), respectively. The simulated inverter and ring oscillator at 10K in iso IOFF condition show 38% and 36.53% delay improvement for VDD = 0.75V, respectively. At VDD = 0.35V, inverter simulations show ∼ 70% improvement in delay and Power-Delay-Product. Static leakage and power dissipation are major challenges in FinFETs; the above-mentioned performance enhancements highlight the potential of characterized technology in quantum computers.
AB - We present cryogenic characterization and compact model extraction of commercially fabricated 5nm technology FinFETs. A modified industry-standard BSIM-CMG model is used to accurately model band-tail, mobility, and velocity saturation effects up to 10K. At 10K, n-FinFET and p-FinFET show 87mV and 92mV threshold voltage shift and sub-threshold slopes of 12.7 and 16.7mV/decade (83% and 78% improvement), respectively. The simulated inverter and ring oscillator at 10K in iso IOFF condition show 38% and 36.53% delay improvement for VDD = 0.75V, respectively. At VDD = 0.35V, inverter simulations show ∼ 70% improvement in delay and Power-Delay-Product. Static leakage and power dissipation are major challenges in FinFETs; the above-mentioned performance enhancements highlight the potential of characterized technology in quantum computers.
KW - 5nm FinFET
KW - Characterization
KW - Cryogenic
KW - Modeling
KW - Quantum Computing)
UR - http://www.scopus.com/inward/record.url?scp=85158164540&partnerID=8YFLogxK
U2 - 10.1109/EDTM55494.2023.10102942
DO - 10.1109/EDTM55494.2023.10102942
M3 - Conference contribution
AN - SCOPUS:85158164540
T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
BT - 7th IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Y2 - 7 March 2023 through 10 March 2023
ER -