Cryogenic Characterization and Model Extraction of 5nm Technology Node FinFETs

Shivendra Singh Parihar, Girish Pahwa, Jun Z. Huang, Weike Wang, Kimihiko Imura, Chenming Hu, Yogesh Singh Chauhan

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

We present cryogenic characterization and compact model extraction of commercially fabricated 5nm technology FinFETs. A modified industry-standard BSIM-CMG model is used to accurately model band-tail, mobility, and velocity saturation effects up to 10K. At 10K, n-FinFET and p-FinFET show 87mV and 92mV threshold voltage shift and sub-threshold slopes of 12.7 and 16.7mV/decade (83% and 78% improvement), respectively. The simulated inverter and ring oscillator at 10K in iso IOFF condition show 38% and 36.53% delay improvement for VDD = 0.75V, respectively. At VDD = 0.35V, inverter simulations show ∼ 70% improvement in delay and Power-Delay-Product. Static leakage and power dissipation are major challenges in FinFETs; the above-mentioned performance enhancements highlight the potential of characterized technology in quantum computers.

原文English
主出版物標題7th IEEE Electron Devices Technology and Manufacturing Conference
主出版物子標題Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350332520
DOIs
出版狀態Published - 2023
事件7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of
持續時間: 7 3月 202310 3月 2023

出版系列

名字7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
國家/地區Korea, Republic of
城市Seoul
期間7/03/2310/03/23

指紋

深入研究「Cryogenic Characterization and Model Extraction of 5nm Technology Node FinFETs」主題。共同形成了獨特的指紋。

引用此