Cr₇₅Si₂₅ thin films-Temperature dependence of electrical properties and microstructure

Engineering & Materials Science

• Crystallization 100%
• Electric properties 97%
• Thin films 86%
• Microstructure 61%
• Nucleation 38%
• Temperature 36%
• Rutherford backscattering spectroscopy 34%
• Amorphous films 29%
• Crystal orientation 25%
• Activation energy 19%
• Transmission electron microscopy 18%
• Grain boundaries 18%
• X ray diffraction 18%
• Volume fraction 16%
• Heating 13%
• Hot Temperature 8%

Chemical Compounds

• Electrical Property 77%
• Crystallization 64%
• Microstructure 62%
• Chemical Transformation 34%
• Nucleation 30%
• Liquid Film 26%
• Amorphous Film 24%
• Rutherford Backscattering Spectroscopy 23%
• X-Ray Diffraction Method 19%
• Grain Boundary 19%
• Alloy 12%
• Reaction Activation Energy 12%
• Amorphous Material 12%
• Transmission Electron Microscopy 12%
• Volume 10%
• Ambient Reaction Temperature 10%