摘要
Various code patterns of a via-programming read only memory (ROM) cause significant fluctuations in coupling noise between bitlines (BLs). This crosstalk between BLs leads to read failure in high-speed via-programmable ROMs and limits the coverage of applicable code patterns. This work presents a content-aware design framework (CADF) for via-programming ROMs to overcome the crosstalk induced read failure. The CADF ROMs employ a content-aware structure and correspondent code-structure programming algorithm to reduce the amount of coupling noise source while maintaining nonminimal BL load for crosstalk reduction. A 256-Kb conventional ROM and a 256-Kb CADF ROM were fabricated using a 0.25-μm logic CMOS process. The measured results ascertain that the read induced read failure is suppressed significantly by CADF. The CADF ROM also reduced 86.2% and 94.5% in power consumption and standby current compared to the conventional ROM, respectively.
原文 | English |
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頁(從 - 到) | 443-447 |
頁數 | 5 |
期刊 | IEEE Transactions on Circuits and Systems I: Regular Papers |
卷 | 53 |
發行號 | 6 |
DOIs | |
出版狀態 | Published - 1 1月 2006 |