Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.
|頁（從 - 到）||L34-L35|
|期刊||Journal of the Electrochemical Society|
|出版狀態||Published - 1 1月 1995|