Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

Tien-Sheng Chao; T. F. Lei

doi:10.1149/1.2048576

Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

Tien-Sheng Chao, T. F. Lei

電子物理學系

研究成果: Article › 同行評審

摘要

Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.

原文	English
頁（從 - 到）	L34-L35
期刊	Journal of the Electrochemical Society
卷	142
發行號	3
DOIs	https://doi.org/10.1149/1.2048576
出版狀態	Published - 1 1月 1995

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@article{fa0880b80d264b44b8f96d81ed11b0ac,

title = "Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20",

abstract = "Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.",

author = "Tien-Sheng Chao and Lei, {T. F.}",

year = "1995",

month = jan,

day = "1",

doi = "10.1149/1.2048576",

language = "English",

volume = "142",

pages = "L34--L35",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "3",

}

TY - JOUR

T1 - Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

AU - Chao, Tien-Sheng

AU - Lei, T. F.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.

AB - Growth mechanisms of three different orientations Si wafer oxidized in N20 have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 A. From our results, this phenomenon is closely related with the initial native oxide before oxidation.

UR - http://www.scopus.com/inward/record.url?scp=0029273998&partnerID=8YFLogxK

U2 - 10.1149/1.2048576

DO - 10.1149/1.2048576

M3 - Article

AN - SCOPUS:0029273998

SN - 0013-4651

VL - 142

SP - L34-L35

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 3

ER -

Crossover Phenomenon in Oxidation Rates of the (110) and (111) Orientations of Silicon in N20

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