Critical Role of GIDL Current for Erase Operation in 3D Vertical FeFET and Compact Long-term FeFET Retention Model

Fei Mo, Jiawen Xiang, Xiaoran Mei*, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto, Chun Jung Su, Vita Pi Ho Hu, Masaharu Kobayashi

*此作品的通信作者

研究成果: Conference contribution同行評審

5 引文 斯高帕斯(Scopus)

摘要

We have investigated and revealed the critical role of GIDL current for efficient erase operation in 3D vertical FeFET by developing proper test structures and demonstrated a compact long-term FeFET retention model based on nucleation-limited switching, for the first time. We also proposed novel FeFET process for low voltage operation by controlling oxygen intrusion into the gate stack. This work contributes to the realization of high-density and low-power 3D vertical FeFET.

原文English
主出版物標題2021 Symposium on VLSI Technology, VLSI Technology 2021
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9784863487802
出版狀態Published - 2021
事件41st Symposium on VLSI Technology, VLSI Technology 2021 - Virtual, Online, Japan
持續時間: 13 6月 202119 6月 2021

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2021-June
ISSN(列印)0743-1562

Conference

Conference41st Symposium on VLSI Technology, VLSI Technology 2021
國家/地區Japan
城市Virtual, Online
期間13/06/2119/06/21

指紋

深入研究「Critical Role of GIDL Current for Erase Operation in 3D Vertical FeFET and Compact Long-term FeFET Retention Model」主題。共同形成了獨特的指紋。

引用此