Creation and Termination of Substrate Deep Depletion in Thin Oxide MOS Capacitors by Charge Tunneling

M. S. Liang, C. Chang, Y. T. Yeow, Chen-Ming Hu, R. W. Brodersen

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

Deep depletion in both p-type and n-type substrates can be induced by minority carriers tunneling away from the substrate. When this occurs, tunneling current becomes saturated at the rate of carrier generation in the substrate, with the excess applied voltage dropped across the deep-depletion region. We present a quantitative model for this phenomenon based on balancing the tunneling current and the space-charge generation current. Conversely, the usual transient deep depletion in n-type substrate MOS capacitors can be terminated by tunneling-induced electron-hole pair generation, except for those with ultrathin oxides (<40 Å).

原文English
頁(從 - 到)350-352
頁數3
期刊IEEE Electron Device Letters
4
發行號10
DOIs
出版狀態Published - 1 1月 1983

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