Coupling between pyroelectricity and built-in electric field enabled highly sensitive infrared phototransistor based on InSe/WSe2/P(VDF-TrFE) heterostructure

Keyphrases

• Band Alignment 33%
• Band Gap 66%
• Band Gap Opening 33%
• Built-in Electric Field 100%
• Bulk Material 33%
• Charge Carrier Separation 33%
• Charge Carriers 33%
• Comprehensive Performance 33%
• Depletion Width 33%
• Dielectric 33%
• Dielectric Polymer 33%
• Electronic Devices 33%
• Fabrication Methods 33%
• Ferroelectric Behavior 66%
• Ferroelectric Polarization 33%
• Heterojunction 33%
• Heterojunction Interface 33%
• Heterostructure 100%
• High Photoresponsivity 33%
• High-performance Electronics 33%
• Highly Sensitive 100%
• Increased Temperature 33%
• Infrared Detection 33%
• Infrared Detector 33%
• Infrared Irradiation 33%
• Infrared Photodetection 33%
• Infrared Phototransistor 100%
• InSe 100%
• Localized Heating Effect 33%
• Material Limits 33%
• Narrow Gap 33%
• P-n Heterojunction 33%
• Photocarrier Separation 33%
• Photodetection 33%
• Photon Energy 33%
• Polymer Dielectrics 66%
• Pyroelectric Effect 66%
• Pyroelectric Infrared Detector 33%
• Pyroelectricity 100%
• Remnant Polarization 33%
• Room Temperature 33%
• Single Device 33%
• Specific Detectivity 33%
• Temperature Effect 33%
• Two Dimensional Materials 66%
• Two-dimensional Heterostructure 33%
• Vinylidene 100%
• Visible Spectrum 33%
• WSe2 100%

Engineering

• 2D Material 50%
• Band Gap 75%
• Bulk Material 25%
• Charge Carrier 50%
• Dielectrics 100%
• Electric Field 100%
• Heating Effect 25%
• Heterojunctions 100%
• Optoelectronic Device 25%
• Photodetection 50%
• Photon Energy 25%
• Phototransistor 100%
• Room Temperature 25%
• Single Device 25%
• Two Dimensional 25%

Material Science

• Charge Carrier 50%
• Dielectric Material 100%
• Ferroelectric Material 75%
• Heterojunction 100%
• Pyroelectricity 100%
• Two-Dimensional Material 50%