Correlation of electrical, thermal and structural properties of microcrystalline silicon thin films

Debajyoti Das*, Madhusudan Jana, Ashok K. Barua, Surajit Chattopadhyay, Li Chyong Chen, Kuei Hsien Chen

*此作品的通信作者

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

Thermal diffusivity (α) has been correlated with the electrical and structural properties of hydrogenated microcrystalline silicon (μc-Si:H) films. In the heterogeneous microcrystalline network, α and electrical conductivity (σD) maintain a one-to-one correspondence, and both these parameters are directly related to the crystalline volume fraction (Fc) of the network. For the amorphous silicon network, α is ∼ 0.2 cm2·s1 and has a very low σD of ∼ 10-8S·cm-1. When the crystalline volume fraction (Fc) exceeds a certain percolation threshold, both α and σD increase abruptly. Undoped μc-Si:H films having Fc ∼ 94% exhibit a high magnitude of α ∼ 0.80 cm2·s-1 and a very high σD of ∼ 10-3 S·cm-1.

原文English
頁(從 - 到)L229-L232
期刊Japanese Journal of Applied Physics, Part 2: Letters
41
發行號3 A
DOIs
出版狀態Published - 1 3月 2002

指紋

深入研究「Correlation of electrical, thermal and structural properties of microcrystalline silicon thin films」主題。共同形成了獨特的指紋。

引用此