The relations between human-body-model (HBM) electrostatic discharge (ESD) waveform and transmission line pulsing (TLP) I-V curve on low temperature poly-Si (LTPS) thin film transistor (TFT) have been investigated in this paper. By using ESD zapper and TLP system, the ESD waveforms and TLP I-V curves on the LPTS TFT devices under different device dimensions have been measured. From the experimental results, the turn-on resistances of TFT devices during HBM zapping and TLP stress are almost the same. Such experimental results have shown a good correction between HBM ESD level and TLP measurement on LTPS TFT devices.
|出版狀態||Published - 1 12月 2004|
|事件||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan|
持續時間: 5 7月 2004 → 8 7月 2004
|Conference||Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004|
|期間||5/07/04 → 8/07/04|