摘要
The relations between human-body-model (HBM) electrostatic discharge (ESD) waveform and transmission line pulsing (TLP) I-V curve on low temperature poly-Si (LTPS) thin film transistor (TFT) have been investigated in this paper. By using ESD zapper and TLP system, the ESD waveforms and TLP I-V curves on the LPTS TFT devices under different device dimensions have been measured. From the experimental results, the turn-on resistances of TFT devices during HBM zapping and TLP stress are almost the same. Such experimental results have shown a good correction between HBM ESD level and TLP measurement on LTPS TFT devices.
原文 | English |
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頁面 | 209-212 |
頁數 | 4 |
DOIs | |
出版狀態 | Published - 1 12月 2004 |
事件 | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , 台灣 持續時間: 5 7月 2004 → 8 7月 2004 |
Conference
Conference | Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 |
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國家/地區 | 台灣 |
期間 | 5/07/04 → 8/07/04 |