Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices

Ming-Dou Ker*, Chun Lin Hou, Chih Yih Chang, Fang Tsun Chu

*此作品的通信作者

    研究成果: Paper同行評審

    13 引文 斯高帕斯(Scopus)

    摘要

    The relations between human-body-model (HBM) electrostatic discharge (ESD) waveform and transmission line pulsing (TLP) I-V curve on low temperature poly-Si (LTPS) thin film transistor (TFT) have been investigated in this paper. By using ESD zapper and TLP system, the ESD waveforms and TLP I-V curves on the LPTS TFT devices under different device dimensions have been measured. From the experimental results, the turn-on resistances of TFT devices during HBM zapping and TLP stress are almost the same. Such experimental results have shown a good correction between HBM ESD level and TLP measurement on LTPS TFT devices.

    原文English
    頁面209-212
    頁數4
    DOIs
    出版狀態Published - 1 12月 2004
    事件Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan
    持續時間: 5 7月 20048 7月 2004

    Conference

    ConferenceProceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
    國家/地區Taiwan
    期間5/07/048/07/04

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