Correlation Between Substrate and Gate Currents in MOSFET's

Simon Tam, Ping Keung Ko, Ping Keung Ko, Chen-Ming Hu, Richard S. Muller

研究成果: Article同行評審

50 引文 斯高帕斯(Scopus)

摘要

A correlation between substrate and gate currents in MOSFET’s is described and analyzed. Both of these currents are the result of hot-electron mechanisms. Theory for these mechanisms has been applied to derive an expression for gate current in terms of substrate current and parameters that can be calculated from processing data and bias conditions. The theory is successfully applied to a series of n-channel MOSFET’s with a range of geometries and bias values.

原文English
頁(從 - 到)1740-1744
頁數5
期刊IEEE Transactions on Electron Devices
29
發行號11
DOIs
出版狀態Published - 1 1月 1982

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