原文 | English |
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頁(從 - 到) | 1079 |
頁數 | 1 |
期刊 | IEEE Transactions on Electron Devices |
卷 | 33 |
發行號 | 7 |
DOIs |
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出版狀態 | Published - 7月 1986 |
Corrections to “Design and Characteristics of a Lightly Doped Drain (LDD) Device Fabricated with Self-Aligned Titanium Disilicide
Fang Shi Lai, Jack Yuan Chen Sun, Sang H. Dhong
研究成果: Comment/debate