Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang*

*此作品的通信作者

研究成果: Letter同行評審

原文English
文章編號7802679
頁(從 - 到)149
頁數1
期刊Ieee Electron Device Letters
38
發行號1
DOIs
出版狀態Published - 1月 2017

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