原文 | English |
---|---|
文章編號 | 7802679 |
頁(從 - 到) | 149 |
頁數 | 1 |
期刊 | Ieee Electron Device Letters |
卷 | 38 |
發行號 | 1 |
DOIs | |
出版狀態 | Published - 1月 2017 |
Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications
Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang*
*此作品的通信作者
研究成果: Letter › 同行評審