Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

Yen Ku Lin; Shuichi Noda; Hsiao Chieh Lo; Shih Chien Liu; Chia Hsun Wu; Yuen Yee Wong; Quang Ho Luc; Po Chun Chang; Heng-Tung Hsu; Seiji Samukawa; Edward Yi Chang

doi:10.1109/LED.2016.2634606

Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang^*

^*此作品的通信作者

研究成果: Letter › 同行評審

原文	English
文章編號	7802679
頁數	1
期刊	IEEE Electron Device Letters
卷	38
發行號	1
DOIs	https://doi.org/10.1109/LED.2016.2634606
出版狀態	Published - 1 1月 2017

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10.1109/LED.2016.2634606

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引用此

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title = "Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications",

author = "Lin, {Yen Ku} and Shuichi Noda and Lo, {Hsiao Chieh} and Liu, {Shih Chien} and Wu, {Chia Hsun} and Wong, {Yuen Yee} and Luc, {Quang Ho} and Chang, {Po Chun} and Heng-Tung Hsu and Seiji Samukawa and Chang, {Edward Yi}",

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T1 - Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

AU - Lin, Yen Ku

AU - Noda, Shuichi

AU - Lo, Hsiao Chieh

AU - Liu, Shih Chien

AU - Wu, Chia Hsun

AU - Wong, Yuen Yee

AU - Luc, Quang Ho

AU - Chang, Po Chun

AU - Hsu, Heng-Tung

AU - Samukawa, Seiji

AU - Chang, Edward Yi

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DO - 10.1109/LED.2016.2634606

M3 - Letter

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VL - 38

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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