Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

Yen Ku Lin; Shuichi Noda; Hsiao Chieh Lo; Shih Chien Liu; Chia Hsun Wu; Yuen Yee Wong; Quang Ho Luc; Po Chun Chang; Heng-Tung Hsu; Seiji Samukawa; Edward Yi Chang

doi:10.1109/LED.2016.2634606

Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications

Yen Ku Lin, Shuichi Noda, Hsiao Chieh Lo, Shih Chien Liu, Chia Hsun Wu, Yuen Yee Wong, Quang Ho Luc, Po Chun Chang, Heng-Tung Hsu, Seiji Samukawa, Edward Yi Chang^*

^*此作品的通信作者

研究成果: Letter › 同行評審

原文	English
文章編號	7802679
頁（從 - 到）	149
頁數	1
期刊	Ieee Electron Device Letters
卷	38
發行號	1
DOIs	https://doi.org/10.1109/LED.2016.2634606
出版狀態	Published - 1月 2017

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10.1109/LED.2016.2634606

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引用此

Lin, Y. K., Noda, S., Lo, H. C., Liu, S. C., Wu, C. H., Wong, Y. Y., Luc, Q. H., Chang, P. C., Hsu, H.-T., Samukawa, S., & Chang, E. Y. (2017). Corrections to AlGaN/GaN HEMTs with damage-free neutral beam etched gate recess for high-performance millimeter-wave applications. Ieee Electron Device Letters, 38(1), 149. 文章 7802679. https://doi.org/10.1109/LED.2016.2634606

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AU - Wu, Chia Hsun

AU - Wong, Yuen Yee

AU - Luc, Quang Ho

AU - Chang, Po Chun

AU - Hsu, Heng-Tung

AU - Samukawa, Seiji

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