Correction: The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms (Applied Physics A, (2023), 129, 2, (126), 10.1007/s00339-022-06332-z)

Po Yu Hong, Chin Hsuan Lin, I. Hsiang Wang, Yu Ju Chiu, Bing Ju Lee, Jiun Chi Kao, Chun Hao Huang, Horng Chih Lin, Thomas George, Pei Wen Li*

*此作品的通信作者

研究成果: Comment/debate

摘要

In this article, there were typographical errors. In third paragraph in Introduction section, “have thus far been demonstrated” should be deleted. The correct sentence is as follows. Thanks to the high absorption coefficients and pseudo-direct band-gap properties of Ge near the C-band communication wavelengths, active photonic devices (light sources and photodetectors) in Si PICs are enabled [2, 3] with small form factors on 2-D silicon-on-insulator (SOI) platforms. Moreover, at the end of third paragraph in “4.1 SiN‑embedded Ge‑QD microdisk light emitters”, unnecessary "Ge QD SiN silicon oxide air" has been remained. That should be deleted. The original article has been corrected.

原文English
文章編號156
期刊Applied Physics A: Materials Science and Processing
129
發行號2
DOIs
出版狀態Published - 2月 2023

指紋

深入研究「Correction: The amazing world of self-organized Ge quantum dots for Si photonics on SiN platforms (Applied Physics A, (2023), 129, 2, (126), 10.1007/s00339-022-06332-z)」主題。共同形成了獨特的指紋。

引用此