摘要
The authors wish to make following corrections in this paper [1]. Authorship Correction Shih-Chen Chen is included as a corresponding author in the updated publication. Text Correction There was an error in the original publication. In the first paragraph of page 7, in the sentence “The LCE of NP-GaN structure is found to be enhanced by 66.2% for green QD and 124.0% for red QD”, the 124.0% should be changed to 52.7%. In Figure 5c,f, the LCE of the red QD film and red NPQD are 62.9% and 96.1%. As a result, the enhancement is 52.7%, not 124.0%. This change does not affect the scientific results or conclusions in the original published paper. The authors would like to apologize for any inconvenience caused to the reader by making this change.
原文 | English |
---|---|
文章編號 | 252 |
期刊 | Nanomaterials |
卷 | 12 |
發行號 | 2 |
DOIs |
|
出版狀態 | Published - 1 1月 2022 |