Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applications

Cheng Shih Lee*, Yi Chung Lien, Edward Yi Chang, Huang Choung Chang, Szu Houng Chen, Ching Ting Lee, Li Hsin Chu, Shang Wen Chang, Yen Chang Hsieh

*此作品的通信作者

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

A GaAs pseudomorphic HEMT (PHEMT) with Cu-metallized interconnects was successfully developed. Sputtered WNx was used as the diffusion barrier and Ti was used as the adhesion layer to improve the adhesion between WNx/Cu interface in the thin-metal structure. After copper metallization, the PHEMTs were passivated with silicon nitride to avoid copper oxidation. The Cu-airbridged PHEMT showed the saturation IDS was 250 mA/mm and the gmwas 456 mS/mm. The Ti adhesion layer plays a significant role on the gm and Vp uniformity of the Cu-metallized PHEMTs. The GaAs PHEMTs with TI/WNx/Ti/Cu multilayer have better noise figure and associated gain than those of the devices without the Ti adhesion layer. The fabricated Cu-metallized GaAs PHEMT with Ti/WNx/Ti/Cu multilayer has a noise figure of 0.76 dB and an associated gain of 8.8 dB at 16 GHz. The cutoff frequency (fT) is 70 GHz when biased at VDS = 1.5 V. These results show that the Ti/WNx/Ti multilayer can serve as a good diffusion barrier for Cu metallization process of airbridge interconnects on GaAs lownoise PHEMTs.

原文English
頁(從 - 到)1753-1758
頁數6
期刊IEEE Transactions on Electron Devices
53
發行號8
DOIs
出版狀態Published - 1 八月 2006

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