Conventional n-channel MOSFET devices using single layer HfO2 and ZrO2 as high-k gate dielectrics with polysilicon gate electrode

Yudong Kim, Gabriel Gebara, Michael Freiler, Joel Barnett, Deborah Riley, Jerry Chen, Kenneth Torres, Jae Eun Lim, Brendan Foran, Fred Shaapur, Avinash Agarwal, Patrick Lysaght, George A. Brown, Chadwin Young, Swarnal Borthakur, Hong Jyh Li, Billy Nguyen, Peter Zeitzoff, Gennadi Bersuker, David DerroRenate Bergmann, Robert W. Murto, Tuo-Hung Hou, Howard R. Huff, Eric Shero*, Christophe Pomarede, Michael Givens, Mike Mazanec, Chris Werkhoven

*此作品的通信作者

研究成果: Conference article同行評審

95 引文 斯高帕斯(Scopus)

摘要

Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000°C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO2/Poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO2/Poly-Si transistors.

原文English
頁(從 - 到)455-458
頁數4
期刊Technical Digest - International Electron Devices Meeting
DOIs
出版狀態Published - 1 12月 2001
事件IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States
持續時間: 2 12月 20015 12月 2001

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