@article{afe28483671e4693a149d2308876bc41,
title = "Conventional n-channel MOSFET devices using single layer HfO2 and ZrO2 as high-k gate dielectrics with polysilicon gate electrode",
abstract = "Conventional self-aligned MOSFET transistors with poly-silicon gate-electrode were successfully fabricated using Hf-oxide and Zr-oxide as high-k gate-dielectrics. The gate-stack consisting of poly-silicon on Hf-oxide exhibited promising transistor characteristics with a S/D RTA temperature of 1000°C, demonstrating feasibility of integrating high-k gate-dielectrics into conventional CMOS process technology. Effects of S/D RTA temperatures on the HfO2/Poly-Si transistor characteristics were discussed. A gate-dimension dependent bi-modal gate leakage current was observed from ZrO2/Poly-Si transistors.",
author = "Yudong Kim and Gabriel Gebara and Michael Freiler and Joel Barnett and Deborah Riley and Jerry Chen and Kenneth Torres and Lim, {Jae Eun} and Brendan Foran and Fred Shaapur and Avinash Agarwal and Patrick Lysaght and Brown, {George A.} and Chadwin Young and Swarnal Borthakur and Li, {Hong Jyh} and Billy Nguyen and Peter Zeitzoff and Gennadi Bersuker and David Derro and Renate Bergmann and Murto, {Robert W.} and Tuo-Hung Hou and Huff, {Howard R.} and Eric Shero and Christophe Pomarede and Michael Givens and Mike Mazanec and Chris Werkhoven",
year = "2001",
month = dec,
day = "1",
doi = "10.1109/IEDM.2001.979538",
language = "English",
pages = "455--458",
journal = "Technical Digest - International Electron Devices Meeting",
issn = "0163-1918",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",
}