Conventional III-V Materials and Devices on Silicon

Edward Yi Chang*

*此作品的通信作者

研究成果: Chapter同行評審

摘要

Materials with high channel mobility are essential as silicon CMOS technology approaches the 30 nm node and beyond. III-V compound semiconductors, with their high mobility and drift velocity under the influence of low electric field, are considered the most promising materials to realize nextgeneration nanoelectronic applications. Table 13.1 compares relevant channel material properties of Si, Ge, and main III-V semiconductors [Takagi 2008].

原文English
主出版物標題III-V Compound Semiconductors
主出版物子標題Integration with Silicon-Based Microelectronics
發行者CRC Press
頁面475-522
頁數48
ISBN(電子)9781439815236
ISBN(列印)9780367383268
DOIs
出版狀態Published - 1 1月 2016

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