Controlled functionalization of a double-junction n+/n-/n+ polysilicon nanobelt for hydrogen sensing application

Nhan Ai Tran, Chen Hsiang Sang, Fu-Ming Pan, Jeng-Tzong Sheu

研究成果: Article同行評審

3 引文 斯高帕斯(Scopus)

摘要

In this paper, a double-junction n+/n-/n+ polysilicon nanobelt selectively functionalized with platinum has been studied for hydrogen sensing application. The selective modification of the devices is performed by the combination of localized ablation of a resist and a lift-off process of e-beam evaporation of a catalyst material. The coverage of a Pt layer on the n- region is precisely controlled by adjusting Joule heating bias and pulse length. The Pt-functionalized devices show a rapid response to hydrogen with a limit of detection of only 5 ppm. The device with fully Ptcovered n- region is optimum for obtaining the best response to hydrogen.

原文English
文章編號04EM01
期刊Japanese journal of applied physics
55
發行號4
DOIs
出版狀態Published - 4月 2016

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