Controllable synthesis of band-gap-tunable and monolayer transition-metal dichalcogenide alloys

Sheng Han Su, Wei Ting Hsu, Chang Lung Hsu, Chang Hsiao Chen, Ming Hui Chiu, Yung Chang Lin, Wen-Hao Chang, Kazu Suenaga, Jr Hau He, Lain Jong Li*

*此作品的通信作者

研究成果: Article同行評審

68 引文 斯高帕斯(Scopus)

摘要

The electronic and optical properties of transition-metal dichalcogenide (TMD) materials are directly governed by their energy gap; thus, band-gap engineering has become an important topic recently. Theoretical and some experimental results have indicated that these monolayer TMD alloys exhibit direct-gap properties and remain stable at room temperature, making them attractive for optoelectronic applications. Here, we systematically compared the two approaches of forming MoS 2x Se 2(1-x) monolayer alloys: Selenization of MoS 2 and sulfurization of MoSe 2 . The optical energy gap of as-grown chemical vapor deposition MoS 2 can be continuously modulated from 1.86 eV (667 nm) to 1.57 eV (790 nm) controllable by the reaction temperature. Spectroscopic and microscopic evidences show that the Mo-S bonds can be replaced by the Mo-Se bonds in a random and homogeneous manner. By contrast, the replacement of Mo-Se by Mo-S does not randomly occur in the MoSe 2 lattice, where the reaction preferentially occurs along the crystalline orientation of MoSe 2 and thus the MoSe 2 /MoS 2 biphases are easily observed in the alloys, which makes the optical band gap of these alloys distinctly different. Therefore, the selenization of metal disulfide is preferred and the proposed synthetic strategy opens up a simple route to control the atomic structure as well as optical properties of monolayer TMD alloys.

原文English
文章編號27
期刊Frontiers in Energy Research
2
發行號JUL
DOIs
出版狀態Published - 1 一月 2014

指紋

深入研究「Controllable synthesis of band-gap-tunable and monolayer transition-metal dichalcogenide alloys」主題。共同形成了獨特的指紋。

引用此