Control of Vth of the enhancement high-frequency AlGaN/GaN HEMT fabricated by oxygen-based digital etching

Ping Yu Tsai, Yu Chen, Chun-Hsiung Lin, Edward Yi Chang*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We established an oxygen-based digital etching technique to fabricate the recessed gate structure for RF GaN HEMT. The digital etching rates were 2.5 nm cycle-1 and 0.5 nm cycle-1 with 40 W RF bias and 0 W RF bias for ICP oxidation, respectively. The roughness of the surface was around 0.1 nm. The Vth of the recessed gate GaN HEMTs can be adjusted from D-mode to E-mode. The GaN HEMT with 110 nm gate length showed a maximum peak gm value of 440 mS mm-1 after 6 cycles of digital etching with Vth near 0 V and ft values nearby 42 GHz.

原文American English
文章編號126501
頁(從 - 到)1-5
頁數5
期刊Applied Physics Express
14
發行號12
DOIs
出版狀態Published - 12月 2021

指紋

深入研究「Control of Vth of the enhancement high-frequency AlGaN/GaN HEMT fabricated by oxygen-based digital etching」主題。共同形成了獨特的指紋。

引用此