Continuous-wave high-power (320 mW) single mode operation of electronic vertically coupled InAs/GaAs quantum dot narrow-ridge-waveguide lasers

J. S. Wang*, Kuo-Jui Lin, R. S. Hsiao, C. S. Yang, C. M. Lai, C. Y. Liang, H. Y. Liu, T. T. Chen, Y. F. Chen, J. Y. Chi, Jenn-Fang Chen

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

High-power 3μm-wide narrow-ridge-waveguide lasers with ten stacks of electronic vertically coupled InAs/GaAs quantum dots in the active region were demonstrated. Unlike that from conventional uncoupled InAs quantum dot lasers, a narrow lasing spectrum was observed because the carriers tunneled in the vertical direction. Continuous-wave operation in single lateral mode yielded a kink-free output power of 320 mW with an efficiency of 0.46 W/A , and a sensitivity of lasing wavelength to temperature of 0.28 nm/K.

原文English
頁(從 - 到)1097-1100
頁數4
期刊Applied Physics B: Lasers and Optics
81
發行號8
DOIs
出版狀態Published - 25 10月 2005

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